Atomic-Scale Characterization of Slip Deformation and Nanometric Machinability of Single-Crystal 6H-SiC
نویسندگان
چکیده
منابع مشابه
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15 صفحه اولStructures of 6H-SiC Surfaces
We have systematically studied reconstructions of the 6H SiC(0001) and (0007) surface under both Si rich and C rich condition using field ion-scanning tunneling microscopy (FI-STM). The sample was cleaned by in situ Si beam etching at 900-1000 'C. The Si rich and C rich phases were produced by annealing the sample in a Si flm and C2HZ, respectively. On the (0001) surface, the as-cleaned surface...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2019
ISSN: 1931-7573,1556-276X
DOI: 10.1186/s11671-019-3123-7